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| www.fairchildsemi.com KA5M0765RQC Fairchild Power Switch(FPS) Features * * * * * * * * * * Precision Fixed Operating Frequency (70kHz) Low Start-up Current (Typ. 100A) Pulse by Pulse Current Limiting Over Load Protection Over Current Protection Over Voltage Protection (Min. 25V) Internal Thermal Shutdown Function Under Voltage Lockout Internal High Voltage Sense FET Auto-Restart Mode Description The Fairchild Power Switch(FPS) product family is specially designed for an off line SMPS with minimal external components. The Fairchild Power Switch(FPS) consist of high voltage power SenseFET and current mode PWM IC. Included PWM controller features integrated fixed frequency oscillator, under voltage lock-out, leading edge blanking, optimized gate turn-on/turn-off driver, thermal shutdown protection, over voltage protection, and temperature compensated precision current sources for loop compensation and fault protection circuitry. compared to discrete MOSFET and PWM controller or RCC solution, a Fairchild Power Switch(FPS) can reduce total component count, design size, weight and at the same time increase efficiency, productivity, and system reliability. It has a basic platform well suited for cost-effective design in either a flyback converter or a forward converter. TO-220-5L 1 1. DRAIN 2. GND 3. VCC 4. FB 5. S/S Internal Block Diagram Vcc 3 + 27V Drain 1 UVLO INTERNAL BIAS Good Logic CLK OVP OVP-out VCC VREF 5uA 15V/9V 1mA - Vref VOLTAG E Sense LIMIT CIRCUIT FET OSC Feedback 4 Soft Start 5 + 7.5V 5V OLP 2.5R 14V S + LEB VO F F S E T Q R R TSD (TJ=150) OVP-out (VCC=27V) OCL (VS=1.4V) VS Rsense Q LEB : Leading Edge Blanking OCL : Over Curr ent Limit S Power-on Reset /Auto-restart R 2 GND Shutdown Lat ch Rev.1.0.5 (c)2004 Fairchild Semiconductor Corporation KA5M0765RQC Absolute Maximum Ratings Parameter Drain-Gate Voltage (RGS=1M) Gate-Source (GND) Voltage Drain Current Pulsed (2) Symbol VDGR VGS IDM EAS ID ID VCC,MAX VFB PD Darting TA TSTG Value 650 30 28.0 570 7.0 5.6 30 -0.3 to VSD 140 1.11 -25 to +85 -55 to +150 Unit V V ADC mJ ADC ADC V V W W/C C C Single Pulsed Avalanche Energy (3) Continuous Drain Current (TC=25C) Continuous Drain Current (TC=100C) Maximum Supply Voltage Input Voltage Range Total Power Dissipation Operating Ambient Temperature Storage Temperature Note: 1. Tj = 25C to 150C 2. Repetitive rating: Pulse width limited by maximum junction temperature 3. L = 24mH, starting Tj = 25C 2 KA5M0765RQC Electrical Characteristics (SFET Part) (Ta=25C unless otherwise specified) Parameter Drain-Source Breakdown Voltage Zero Gate Voltage Drain Current Static Drain-Source on Resistance (Note) Forward Transconductance Input Capacitance Output Capacitance Reverse Transfer Capacitance Turn on Delay Time Rise Time Turn Off Delay Time Fall Time Total Gate Charge (Gate-Source+Gate-Drain) Gate-Source Charge Gate-Drain (Miller) Charge (Note) Symbol BVDSS IDSS RDS(ON) gfs Ciss Coss Crss td(on) tr td(off) tf Qg Qgs Qgd Condition VGS=0V, ID=50A VDS=Max., Rating, VGS=0V VDS=0.8Max., Rating, VGS=0V, TC=125C VGS=10V, ID=3.5A VDS=50V, ID=3.5A VGS=0V, VDS=25V, f=1MHz VDD=0.5BVDSS, ID=7.0A (MOSFET switching time are essentially independent of operating temperature) VGS=10V, ID=7.0A, VDS=0.8BVDSS Min. 650 3.0 - Typ. 1.25 1120 125 25 25 70 105 65 38 6.5 18 Max. 50 200 1.6 60 150 220 140 50 - Unit V A A S pF nS nC Note: 1. Pulse test: Pulse width 300S, duty cycle 2% 2. 1 S = --R 3 KA5M0765RQC Electrical Characteristics (Control Part) (Continued) (Ta=25C unless otherwise specified) Parameter UVLO SECTION Start Threshold Voltage Stop Threshold Voltage OSCILLATOR SECTION Initial Accuracy Frequency Change With Temperature Maximum Duty Cycle FEEDBACK SECTION Feedback Source Current Shutdown Feedback Voltage Shutdown Delay Current SOFT START SECTION Soft Start Voltage Soft Start Current REFERENCE SECTION Output Voltage (1) Temperature Stability Peak Current Limit PROTECTION SECTION Thermal Shutdown Temperature (Tj) (1) Over Voltage Protection TOTAL DEVICE SECTION Start Up Current Operating Supply Current (Control Part Only) ISTART IOP VCC=14V VCC 28 0.1 7 0.17 12 mA mA TSD VOVP 140 25 160 27 29 C V (1)(2) (2) Symbol VSTART VSTOP FOSC F/T Dmax IFB VSD Idelay VSS ISS Vref Vref/T IOVER Condition After turn on Ta=25C -25C Ta +85C Ta=25C, 0V Vfb 3V Vfb 6.5V Ta=25C, 5V Vfb VSD VFB =2V Sync & S/S=GND Ta=25C -25C Ta +85C Max. inductor current Min. 14 8.4 61 74 0.7 6.9 4 4.7 0.8 4.80 4.40 Typ. 15 9 67 5 77 0.9 7.5 5 5.0 1.0 5.00 0.3 5.00 Max. 16 9.6 73 10 80 1.1 8.1 6 5.3 1.2 5.20 0.6 5.60 Unit V V kHz % % mA V A V mA V mV/C A CURRENT LIMIT (SELF-PROTECTION) SECTION Note: 1. These parameters, although guaranteed, are not 100% tested in production 2. These parameters, although guaranteed, are tested in EDS (wafer test) process 4 KA5M0765RQC Typical Performance Characteristics (SFET part) 10 1 10 0 ID, Drain Current [A] ID, Drain Current [A] VGS 15.0 V 10.0 V 8.0 V 7.0 V 6.5 V 6.0 V Bottom : 5.5 V Top : 10 1 150 10 0 25 -55 10 -1 Note : 1. 250 s Pulse Test 2. TC = 25 Notes : 1. VDS = 50V 2. 250 s Pulse Test 10 -1 10 0 10 1 10 -1 2 4 6 8 10 VDS, Drain-Source Voltage [V] VGS, Gate-Source Voltage [V] Figure 1. Output Characteristics Figure 2. Transfer Characteristics RDS(on) , [] Drain-Source On-Resistance 3.0 VGS = 10V 2.5 VGS = 20V 10 1 2.0 IDR, Reverse Drain Current [A] 10 0 1.5 150 25 Notes : 1. VGS = 0V 2. 250 s Pulse Test 1.0 0 3 6 9 12 15 18 10 -1 0.2 0.4 0.6 0.8 1.0 1.2 1.4 1.6 1.8 ID , Drain Current [A] VSD, Source-Drain voltage [V] Figure 3. On-Resistance vs. Drain Current Figure 4. Source-Drain Diode Forward Voltage 2500 Ciss = Cgs + Cgd (Cds = shorted) Coss = Cds + Cgd Crss = Cgd 12 VDS = 130V VGS, Gate-Source Voltage [V] 2000 10 VDS = 325V VDS = 520V Capacitances [pF] Ciss 1500 8 Coss 1000 6 Crss 500 Note ; 1. VGS = 0 V 2. f = 1 MHz 4 2 Note : ID = 6.5 A 0 -1 10 0 10 0 10 1 0 5 10 15 20 25 30 35 40 45 VDS, Drain-Source Voltage [V] QG, Total Gate Charge [nC] Figure 5. Capacitance vs. Drain-Source Voltage Figure 6. Gate Charge vs. Gate-Source Voltage 5 KA5M0765RQC Typical Performance Characteristics (SFET part) (Continued) 1.2 3.0 BVDSS, (Normalized) Drain-Source Breakdown Voltage 1.1 RDS(ON), (Normalized) Drain-Source On-Resistance 2.5 2.0 1.0 1.5 1.0 0.9 Note : 1. VGS = 0 V 2. ID = 250 A 0.5 Note : 1. VGS = 10 V 2. ID = 6.0 A 0.8 -100 -50 0 50 100 o 150 200 0.0 -100 -50 0 50 100 o 150 200 TJ, Junction Tem perature [ C] TJ, Junction Temperature [ C] Figure 7. Breakdown Voltage vs. Temperature Figure 8. On-Resistance vs. Temperature 8 10 2 Operation in This Area is Limited by R DS(on) ID, Drain Current [A] 6 10 1 100 s 1 ms 10 ms DC ID, Drain Current [A] 3 4 10 0 Notes : 2 1. TC = 25 C 2. TJ = 150 C 3. Single Pulse o o 10 -1 10 0 10 1 10 2 10 0 25 50 75 100 125 150 VDS, Drain-Source Voltage [V] TC, Case Temperature [] Figure 9. Max. Safe Operating Area Figure 10. Max. Drain Current vs. Case Temperature 10 0 D=0.5 Z JC(t), Thermal Response 0.2 10 -1 0.1 0.05 0.02 0.01 Notes : 1. Z JC(t) = 0.9 /W Max. 2. Duty Factor, D=t1/t2 3. TJM - TC = PDM * Z JC(t) -3 10 -2 single pulse 10 -5 10 -4 10 10 -2 10 -1 10 0 10 1 t1, Square Wave Pulse Duration [sec] Figure 11. Thermal Response 6 KA5M0765RQC Typical Performance Characteristics (Control part) (Contiuned) (These characteristic graphs are normalized at Ta=25C) 1.2 1.15 1.1 1.05 Fosc 1 0.95 0.9 0.85 0.8 -25 Fig.1 Operating Frequency 0 25 50 75 100 125 150 1.2 1.15 1.1 1.05 Ifb 1 0.95 0.9 0.85 0.8 -25 Fig.2 Feedback Source Current 0 25 50 75 100 125 150 Figure 1. Operating Frequency Figure 2. Feedback Sourece Current 1.2 1.15 1.1 1.05 Iop 1 0.95 0.9 0.85 0.8 -25 Fig.3 Operating Current 1.1 1.05 Fig.4 Max Inductor Current Ipeak 1 Iover 0.95 0.9 0.85 0 25 50 75 100 125 150 0.8 -25 0 25 50 75 100 125 150 Figure 3. Operating Supply Current Figure 4. Peak Current Limit 1.5 1.3 Fig.5 Start up Current 1.15 1.1 1.05 Fig.6 Start Threshold Voltage Istart 1.1 0.9 0.7 0.5 -25 0 25 50 75 100 125 150 Vstart 1 0.95 0.9 0.85 -25 0 25 50 75 100 125 150 Figure 5. Start up Current Figure 6. Start Thershold Voltage 7 KA5M0765RQC Typical Performance Characteristics (Continued) (These characteristic graphs are normalized at Ta=25C) 1.15 1.1 1.05 Fig.7 Stop Threshold Voltage 1.15 1.1 1.05 Fig.8 Maximum Duty Cycle Vstop 1 0.95 0.9 0.85 -25 0 25 50 75 100 125 150 Dmax 1 0.95 0.9 0.85 -25 0 25 50 75 100 125 150 Figure 7. Stop Threshold Voltage Figure 8. Maximum Duty Cycle 1.2 1.15 1.1 1.05 Vz 1 0.95 0.9 0.85 0.8 -25 Fig.9 Vcc Zener Voltage 1.15 1.1 1.05 Fig.10 Shutdown Feedback Voltage Vsd 1 0.95 0.9 0.85 -25 0 25 50 75 100 125 150 0 25 50 75 100 125 150 Figure 9. VCC Zener Voltage Figure 10. Shutdown Feedback Voltage 1.2 1.15 1.1 1.05 Idelay 1 0.95 0.9 0.85 0.8 -25 Fig.11 Shutdown Delay Current 1.15 1.1 1.05 Fig.12 Over Voltage Protection Vovp 1 0.95 0.9 0 25 50 75 100 125 150 0.85 -25 0 25 50 75 100 125 150 Figure 11. Shutdown Delay Current Figure 12. Over Voltage Protection 8 KA5M0765RQC Typical Performance Characteristics (Continued) (These characteristic graphs are normalized at Ta=25C) 1.15 1.1 1.05 Fig.13 Soft Start Voltage 2.5 2 1.5 ( Rdson)1 0.5 0 25 50 75 100 125 150 Fig.14 Drain Source Turn-on Resistance Vss 1 0.95 0.9 0.85 -25 0 -25 0 25 50 75 100 125 150 Figure 13. Soft Start Voltage Figure 14. Static Drain-Source on Resistance 9 KA5M0765RQC Package Dimensions TO-220-5L 10 KA5M0765RQC Package Dimensions (Continued) TO-220-5L(Forming) 11 KA5M0765RQC Ordering Information Product Number KA5M0765RQCTU KA5M0765RQCYDTU TU : Non Forming Type YDTU : Forming Type Package TO-220F-5L TO-220F-5L(Forming) Rating 650V, 7A Topr (C) -25C to +85C DISCLAIMER FAIRCHILD SEMICONDUCTOR RESERVES THE RIGHT TO MAKE CHANGES WITHOUT FURTHER NOTICE TO ANY PRODUCTS HEREIN TO IMPROVE RELIABILITY, FUNCTION OR DESIGN. FAIRCHILD DOES NOT ASSUME ANY LIABILITY ARISING OUT OF THE APPLICATION OR USE OF ANY PRODUCT OR CIRCUIT DESCRIBED HEREIN; NEITHER DOES IT CONVEY ANY LICENSE UNDER ITS PATENT RIGHTS, NOR THE RIGHTS OF OTHERS. LIFE SUPPORT POLICY FAIRCHILD'S PRODUCTS ARE NOT AUTHORIZED FOR USE AS CRITICAL COMPONENTS IN LIFE SUPPORT DEVICES OR SYSTEMS WITHOUT THE EXPRESS WRITTEN APPROVAL OF THE PRESIDENT OF FAIRCHILD SEMICONDUCTOR CORPORATION. As used herein: 1. Life support devices or systems are devices or systems which, (a) are intended for surgical implant into the body, or (b) support or sustain life, and (c) whose failure to perform when properly used in accordance with instructions for use provided in the labeling, can be reasonably expected to result in a significant injury of the user. www.fairchildsemi.com 8/3/04 0.0m 001 Stock#DSxxxxxxxx 2004 Fairchild Semiconductor Corporation 2. A critical component in any component of a life support device or system whose failure to perform can be reasonably expected to cause the failure of the life support device or system, or to affect its safety or effectiveness. |
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